ヤマウチ　ヒロシ   Yamauchi Hiroshi   山内　博    所属   千葉工業大学  工学部 宇宙・半導体工学科    職種   准教授
言語種別	英語
発行・発表の年月	2008/12
形態種別	学術雑誌
査読	査読あり
標題	Characterization of Zinc Oxide and Pentacene Thin Film Transistors for CMOS Inverters
執筆形態	共著
掲載誌名	IEICE TRANSACTIONS ON ELECTRONICS
掲載区分	国外
出版社・発行元	IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
巻・号・頁	E91C(12),pp.1843-1847
著者・共著者	Hiroyuki Iechi,Yasuyuki Watanabe,Hiroshi Yamauchi,Kazuhiro Kudo
概要	We fabricated both thin film transistors (TFTs) and diodes using zinc oxide (ZnO) and pentacene, and investigated their basic characteristics. We found that field-effect mobility is influenced by the interface state between the semiconductor and dielectric layers. Furthermore, the complementary metal oxide semiconductor (CMOS) inverter using a p-channel pentacene field-effect transistor (FET) and an n-channel ZnO FET showed a relatively high voltage gain (8 - 12) by optimizing the device structure. The hybrid complementary inverters described here are expected for application in flexible displays, radio frequency identification cards (RFID) tags. and others.
DOI	10.1093/ietele/e91-c.12.1843
ISSN	1745-1353