Faculty Information - Shin-Ichiro HAYASHI

（Last updated : 2026-06-10 14:13:56）

Shin-Ichiro HAYASHI
Department of Electrical and Electronic Engineering, Faculty of Engineering

Associate Professor

■ Office

Tsudanuma Campus, No.2 Building,12th floor room 011213

■ Academic background

〔Doctorial Course〕, Tokyo Metropolitan University, Completed,

■ Present specialized field

Power engineering (Key Word：power electronics, power semiconductor devices, reliability engineering)

■ Works

1.	Article	Design of gate drive voltage for SiC MOSFETs considering gate oxide TDDB lifetime and performance Microelectronics Reliability 179(116079) (Collaboration) 2026/04
2.	Article	Experimental Verification of the Switching Loss Reduction Effect and Characteristic Fluctuation of SiC MOSFETs Dependent Gate Drive Voltage pp.98-106 (Collaboration) 2025/02
3.	Article	Single-Input Dual-Output Digital Gate Driver IC Automatically Equalizing Drain Current Variations of Two Parallel-Connected SiC MOSFETs IEEE Transactions on Power Electronics (Collaboration) 2024/09/17
4.	Article	Operational Verification of Gate Drive Circuit With Condition Monitoring Function for Gate Oxide Degradation of SiC MOSFETs IEEE Open Journal of Power Electronics 5,pp.709-717 (Collaboration) 2024/05/06
5.	Article	Gate Drive Circuit with Input Capacitance C_iss Measurement Function\\for the Condition Monitoring of Power Devices pp.471-479 (Collaboration) 2022/06
6.	Article	Design a Continuous Switching Test Circuit for Power Devices to Evaluate Reliability IEEJ Journal of Industry Applications 11(1),pp.108-116 (Collaboration) 2022/01/01
7.	Article	Accelerated aging for gate oxide of SiC MOSFETs under continuous switching conditions by applying advanced HTGB test Microelectronics Reliability 126 (Collaboration) 2021/12/06
8.	Article	Accelerated aging test for gate-oxide degradation in SiC MOSFETs for condition monitoring Microelectronics Reliability 114 (Collaboration) 2020/11/19
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